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| December 1996 NDH8320C Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description These dual N- and P -Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed. Features N-Channel 3 A, 20 V, RDS(ON)=0.06 @ VGS=4.5 V RDS(ON)=0.075 @ VGS=2.7 V P-Channel -2A, -20V, RDS(ON)=0.13 @ VGS=-4.5 V RDS(ON)=0.19 @ VGS=-2.7 V. Proprietary SuperSOTTM-8 package design using copper lead frame for superior thermal and electrical capabilities. High density cell design for extremely low RDS(ON). Exceptional on-resistance and maximum DC current capability. ___________________________________________________________________________________ 5 4 3 2 1 6 7 8 Absolute Maximum Ratings Symbol VDSS VGSS ID Parameter Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed PD TJ,TSTG T A= 25C unless otherwise noted N-Channel 20 8 (Note 1) P-Channel -20 -8 -2 -10 0.8 -55 to 150 Units V V A 3 15 Power Dissipation for Single Operation Operating and Storage Temperature Range (Note 1) W C THERMAL CHARACTERISTICS RJA RJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1) (Note 1) 156 40 C/W C/W (c) 1997 Fairchild Semiconductor Corporation NDH8320C Rev.B Electrical Characteristics (TA = 25C unless otherwise noted) Symbol Parameter Conditions Type Min Typ Max Units OFF CHARACTERISTICS BVDSS IDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 A VGS = 0 V, ID = -250 A Zero Gate Voltage Drain Current VDS = 16 V, VGS = 0 V TJ = 55oC VDS = -16 V, VGS = 0 V TJ = 55 C IGSSF IGSSR VGS(th) Gate - Body Leakage, Forward Gate - Body Leakage, Reverse VGS = 8 V, VDS = 0 V VGS = -8 V, VDS= 0 V VDS = VGS, ID = 250 A TJ = 125oC VDS = VGS, ID = -250 A TJ = 125oC RDS(ON) Static Drain-Source On-Resistance VGS = 4.5 V, ID = 3 A TJ = 125oC VGS = 2.7 V, ID = 2.6 A VGS = -4.5 V, ID = -2 A TJ = 125 C VGS = -2.7 V, ID = -1.7 A ID(on) On-State Drain Current VGS = 4.5 V, VDS = 5 V VGS = 2.7 V, VDS = 5 V VGS = -4.5 V, VDS = -5 V VGS = -2.7 V, VDS = -5 V gFS Forward Transconductance VDS = 5 V, ID = 3 A VDS = -5 V, ID = -2 A DYNAMIC CHARACTERISTICS Ciss Coss Crss Input Capacitance N-Channel VDS = 10 V, VGS = 0 V, f = 1.0 MHz P-Channel VDS = -10 V, VGS = 0 V, f = 1.0 MHz N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 415 515 220 250 85 85 pF pF pF N-Ch P-Ch P-Ch N-Ch 15 5 -10 -4 10 5 S o o N-Ch P-Ch N-Ch 20 -20 1 10 V V A A A A nA nA P-Ch -1 -10 All All 100 -100 ON CHARACTERISTICS (Note 2) Gate Threshold Voltage N-Ch 0.4 0.3 P-Ch -0.4 -0.3 N-Ch 0.7 0.45 -0.6 -0.42 0.047 0.07 0.059 P-Ch 0.102 0.15 0.147 1 0.7 -1 -0.7 0.06 0.11 0.075 0.13 0.23 0.19 A V Output Capacitance Reverse Transfer Capacitance NDH8320C Rev.B Electrical Characteristics (TA = 25C unless otherwise noted) Symbol Parameter Conditions Type Min Typ Max Units SWITCHING CHARACTERISTICS (Note 2) tD(on) tr tD(off) tf Qg Qgs Qgd Turn - On Delay Time Turn - On Rise Time N-Channel VDD = 5 V, ID = 1 A, VGEN = 4.5 V, RGEN = 6 P-Channel VDD = -5 V, ID = -1 A, VGEN = -4.5 V, RGEN = 6 N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch Total Gate Charge Gate-Source Charge N-Channel VDS = 10 V, ID = 3 A, VGS = 4.5 V P-Channel VDS = -10 V, ID = -2 A, VGS = -4.5 V N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS IS VSD Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage N-Ch P-Ch VGS = 0 V, IS = 0.67 A VGS = 0 V, IS = -0.67 A Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design. (Note2) (Note2) 8 10 25 27 30 37 8 39 10 7.8 0.9 1.2 3.5 1.8 15 20 45 50 55 65 15 75 15 11 ns ns Turn - Off Delay Time ns Turn - Off Fall Time ns nC nC Gate-Drain Charge nC 0.67 -0.67 0.7 -0.75 1.2 -1.2 A V N-Ch P-Ch P D(t) = T J -T A R J A (t) = R J C CA +R (t) T J -T A = I 2 (t ) x RDS(ON)@ J T D Typical RJA for single device operation using the board layout shown below on 4.5"x5" FR-4 PCB in a still air environment: 156oC/W when mounted on a 0.0025 in2 pad of 2oz copper. Scale 1 : 1 on letter size paper. 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0%. NDH8320C Rev.B Typical Electrical Characteristics: N-Channel 15 I D , DRAIN-SOURCE CURRENT (A) 12 DRAIN-SOURCE ON-RESISTANCE VGS =4.5V 3.0 2.7 2.5 R DS(on), NORMALIZED 2 1.75 VGS = 2.0V 2.0 9 1.5 2.5 1.25 6 2.7 3.0 3.5 4.5 3 1 0 0 0.5 V DS 1 1.5 2 2.5 3 0.75 0 3 6 9 12 15 I D , DRAIN CURRENT (A) , DRAIN-SOURCE VOLTAGE (V) Figure 1. N-Channel On-Region Characteristics. Figure 2. N-Channel On-Resistance Variation with Gate Voltage and Drain Current. 1 .8 2 1 .6 DRAIN-SOURCE ON-RESISTANCE R DS(ON) , NORMALIZED 1 .4 1 .2 1 0 .8 0 .6 0 .4 -50 DRAIN-SOURCE ON-RESISTANCE I D = 3A V GS = 4.5V VGS = 4.5V T = 125C J 1.5 R DS(on) , NORMALIZED 1 25C 0.5 -55C -25 0 25 50 75 100 125 150 0 TJ , JUNCTION TEMPERATURE (C) 0 3 6 9 12 15 I D , DRAIN CURRENT (A) Figure 3. N-Channel On-Resistance Variation with Temperature. Figure 4. N-Channel On-Resistance Variation with Drain Current and Temperature. V DS =- 5V I , DRAIN CURRENT (A) 8 TJ = -55C 25C Vth , NORMALIZED GATE-SOURCE THRESHOLD VOLTAGE 10 1.3 1.2 1.1 1 0.9 0.8 0.7 0.6 0.5 -50 -25 0 25 50 75 100 125 150 VDS = VGS I D = 250A 125C 6 4 D 2 0 0 0.5 1 1.5 2 2.5 3 VGS , GATE TO SOURCE VOLTAGE (V) TJ , JUNCTION TEMPERATURE (C) Figure 5. N-Channel Transfer Characteristics. Figure 6. N-Channel Gate Threshold Variation with Temperature. NDH8320C Rev.B Typical Electrical Characteristics: N-Channel (continued) DRAIN-SOURCE BREAKDOWN VOLTAGE 1.15 10 5 ID = 250A 1.1 IS , REVERSE DRAIN CURRENT (A) VGS =0V 1 BV DSS , NORMALIZED TJ = 125C 0.1 1.05 25C -55C 1 0.01 0.95 0.001 0.9 -50 -25 T 0 J 25 50 75 100 125 150 0.0001 0 0.2 V SD 0.4 0.6 0.8 1 1.2 , JUNCTION TEMPERATURE (C) , BODY DIODE FORWARD VOLTAGE (V) Figure 7. N-Channel Breakdown Voltage Variation with Temperature. Figure 8. N-Channel Body Diode Forward Voltage Variation with Current and Temperature. 1200 800 , GATE-SOURCE VOLTAGE (V) 500 CAPACITANCE (pF) 300 200 5 I D = 3A Ciss Coss 4 VDS = 5V 10 15V 3 2 100 Crss f = 1 MHz V GS = 0 V 1 GS 40 0 .1 V 0 .5 1 3 5 , DRAIN TO SOURCE VOLTAGE (V) 10 20 0 0 2 4 6 8 10 12 Q g , GATE CHARGE (nC) 0 .2 V DS Figure 9. N-Channel Capacitance Characteristics. Figure 10. N-Channel Gate Charge Characteristics. gFS , TRANSCONDUCTANCE (SIEMENS) 20 V DS = 5V 16 T = -55C J 25C 12 8 125C 4 0 0 2 4 6 8 10 ID , DRAIN CURRENT (A) Figure 11. N-Channel Transconductance Variation with Drain Current and Temperature. NDH8320C Rev.B Typical Electrical Characteristics: P-Channel (continued) -20 I D , DRAIN-SOURCE CURRENT (A) -4.5 -4.0 R DS(on) , NORMALIZED DRAIN-SOURCE ON-RESISTANCE V GS = -5.0V 2 1.8 -16 -3.5 -3.0 -8 V GS = -2.5 V 1.6 1.4 -12 -2.7 -3.0 -3.5 -2.7 -2.5 1.2 1 0.8 -4.0 -4.5 -5.0 -4 -2.0 0 0 -1 V DS -2 -3 -4 -5 0 -4 -8 -12 -16 -20 , DRAIN-SOURCE VOLTAGE (V) I D , DRAIN CURRENT (A) Figure 12. P-Channel On-Region Characteristics. Figure 13. P-Channel On-Resistance Variation with Gate Voltage and Drain Current. 1.6 2 I D = -2A R DS(on) , NORMALIZED 1.4 V G S =- 4.5V DRAIN-SOURCE ON-RESISTANCE VGS = -4.5V TJ = 125C DRAIN-SOURCE ON-RESISTANCE R DS(ON), NORMALIZED 1.5 1.2 1 25C 1 0.8 -55C 0.6 -50 -25 0 25 50 75 100 T , JUNCTION TEMPERATURE (C) J 125 150 0.5 0 -4 I D -8 -12 -16 -20 , DRAIN CURRENT (A) Figure 14. P-Channel On-Resistance Variation with Temperature. Figure 15. P-Channel On-Resistance Variation with Drain Current and Temperature. V DS = -5V -8 I , DRAIN CURRENT (A) T = -55C J 25C 125C VGS(th) , NORMALIZED GATE-SOURCE THRESHOLD VOLTAGE -10 1.2 1.1 1 0.9 0.8 0.7 0.6 -50 VDS = VGS I D = -250A -6 -4 D -2 0 -0.5 -1 V GS -1.5 -2 -2.5 -3 -3.5 -25 0 J 25 50 75 100 125 150 , GATE TO SOURCE VOLTAGE (V) T , JUNCTION TEMPERATURE (C) Figure 16. P-Channel Transfer Characteristics. Figure 17. P-Channel Gate Threshold Variation with Temperature. NDH8320C Rev.B Typical Electrical Characteristics: P-Channel (continued) DRAIN-SOURCE BREAKDOWN VOLTAGE 1.1 10 -IS , REVERSE DRAIN CURRENT (A) 1.08 1.06 1.04 1.02 1 0.98 0.96 0.94 -50 I D = -250A 4 1 VGS = 0V TJ = 125C BV DSS , NORMALIZED 0.1 25C -55C 0.01 0.001 -25 0 J 25 50 75 100 125 150 0.0001 0 0.2 -V SD T , JUNCTION TEMPERATURE (C) 0.4 0.6 0.8 1 1.2 , BODY DIODE FORWARD VOLTAGE (V) Figure 18. P-Channel Breakdown Voltage Variation with Temperature. Figure 19. P-Channel Body Diode Forward Voltage Variation with Current and Temperature. 1200 , GATE-SOURCE VOLTAGE (V) 5 I 800 CAPACITANCE (pF) 500 300 200 4 D = -2A V DS = -5V -10V -15V C iss 3 Coss f = 1 MHz V GS = 0 V C rss 2 100 50 0.1 -V 0 0.2 0.5 1 2 5 10 20 GS 1 0 2 Q g -VDS , DRAIN TO SOURCE VOLTAGE (V) 4 , GATE CHARGE (nC) 6 8 Figure 20. P-Channel Capacitance Characteristics. Figure 21. P-Channel Gate Charge Characteristics. g FS, TRANSCONDUCTANCE (SIEMENS) 12 V DS = - 5V 10 8 6 4 2 0 0 -5 -10 TJ = -55C 25C 125C -15 -20 I D , DRAIN CURRENT (A) Figure 22. P-Channel Transconductance Variation with Drain Current and Temperature. NDH8320C Rev.B Typical Thermal Characteristics: N & P-Channel 40 20 10 5 I , DRAIN CURRENT (A) R ( DS ) ON LIM IT 20 10 1m 10 10 0u 10 10 LI N) T MI s -I , DRAIN CURRENT (A) 5 2 1 0.5 RD S(O 1m 10 ms 0u s s s ms s 10 1 0.5 0m 0m s 1s 1s 10 s V GS = 4.5V SINGLE PULSE 0.1 10 s DC 0.1 0.05 DC V GS = -4.5V SINGLE PULSE R J A = See Note 1 A R J A = See Note 1 D 0.05 TA = 25C D TA = 25C 0.5 1 2 5 10 - V DS , DRAIN-SOURCE VOLTAGE (V) 20 40 0.01 0.1 0.2 V 0.5 DS 1 2 5 10 , DRAIN-SOURCE VOLTAGE (V) 20 30 0.01 0.1 0.2 Figure 23. N-Channel Maximum Safe Operating Area. Figure 24. P-Channel Maximum Safe Operating Area. 1 TRANSIENT THERMAL RESISTANCE D = 0.5 0.2 r(t), NORMALIZED EFFECTIVE R 0.1 0.1 0.05 0.02 JA (t) = r(t) * R JA R JA = See Notes 1 P(pk) 0.01 0.01 t1 TJ - T t2 Single Pulse = P * R JA (t) Duty Cycle, D = t1 / t2 A 0.001 0.0001 0.001 0.01 0.1 1 t , TIME (sec) 1 10 100 300 Figure 25. Transient Thermal Response Curve. Note: Thermal characterization performed using the conditions described in note1 . Transient thermal response will change depending on the circuit board design. VDD V IN D t on t off tr 90% RL V OUT t d(on) t d(off) 90% tf VGS VOUT R GEN 10% G DUT 10% 90% S V IN 10% 50% 50% PULSE WIDTH Figure 26. N or P-Channel Switching Test Circuit. Figure 27. N or P-Channel Switching Waveforms. NDH8320C Rev.B |
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